发光二极管及其制造方法

Light-emitting diode and method for fabrication thereof

Abstract

A light-emitting diode (10) includes a transparent substrate and a compound semiconductor layer that contains a light-emitting part (12) containing a light-emitting layer (133) formed of (AlxGaI-X)YIn1-YP; in which 0<X<1 and 0<Y<1), and that is joined to the transparent substrate (14). wherein the light-emitting diode (10) has on a main light-extracting surface thereof a first electrode (15) and a second electrode (16) different in polarity from the first electrode, the transparent substrate has side faces that are a first side face (142) roughly perpendicular to a light-emitting surface of the light-emitting layer on a side near the light-emitting layer and a second side face (143) inclined relative to the light-emitting surface on a side distant from the light-emitting layer and coarsened with irregularities falling in a range of 0.05 mu m to 3 mu m. The light-emitting diode provided on the light-extracting surface with the two electrodes manifests a high efficiency of light extraction and high brightness.
一种发光二极管(10)包括透明衬底和化合物半导体层,所述化合物半导体层包含发光部分(12),所述发光部分(12)包含由(AlXGa1-X)YIn1-YP形成的发光层133,其中0≤X≤1且0<Y≤1,并且所述化合物半导体层被接合到所述透明衬底(14)。其中,在所述发光二极管(10)在其主光提取表面上具有第一电极(15)和极性不同于所述第一电极的第二电极(16),所述透明衬底具有侧面,所述侧面为第一侧面(142)和第二侧面(143),所述第一侧面(142)邻近所述发光层基本上垂直于所述发光层的发光表面,所述第二侧面(143)远离所述发光层并相对于所述发光表面是倾斜的,并且所述第二侧面(143)被粗糙化为具有范围为0.05μm至3μm的不平整度。在所述光提取表面上具有两个电极的发光二极管表现出高光提取效率和高亮度。

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    Title
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