半导体器件及其制造方法

Semiconductor device and method of manufacturing thereof

Abstract

半导体器件(100)包括至少一个半导体元件(20)、包括第一(31)和第二引线(32)并且在电阻上延伸的金属化结构。电绝缘保护层(36)位于电阻(35)上,限定在实质上与电阻图形相同的图形中,并且具有可达到至少等于将要沉积其上的钝化层(37)的沉积温度的温度的温度稳定性,以覆盖金属化结构。电阻(35)和保护层(36)都均匀地沉积在金属化结构和任何下面的衬底上。
The semiconductor device (100) comprises at least one semiconductor element (20), a metallization structure comprising a first (31) and a second line (32) and extending thereon a resistor. An electrically insulating protection layer (36) is present on the resistor (35) and is defined in a pattern that is substantially identical to the resistor pattern and has a temperature stability up to a temperature that is at least equal to a deposition temperature of a passivation layer (37) to be deposited thereon so as to cover the metallization structure. Both the resistor (35) and the protection layer (36) are deposited conformally on the metallization structure and any underlying substrate.

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Patent Citations (2)

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NO-Patent Citations (2)

    Title
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