高迁移率三栅器件及其制造方法

High mobility tri-gate devices and fabrication methods thereof

Abstract

提供了一种高迁移率半导体组件。在一个示范方面,高迁移率半导体组件包括具有位于第一衬底上<110>晶面位置处的第一参考定向的第一衬底和在第一衬底顶部形成的第二衬底。第二衬底具有位于第二衬底上<100>晶面位置处的第二参考定向,其中第一参考定向与第二参考定向对准。在另一个示范方面,第二衬底具有位于第二衬底上<110>晶面位置处的第二参考定向,其中在第二参考定向相对于第一参考定向偏移大约45度的情况下,第二衬底在第一衬底上方形成。
A high mobility semiconductor assembly. In one exemplary aspect, the high mobility semiconductor assembly includes a first substrate having a first reference orientation located at a <110> crystal plane location on the first substrate and a second substrate formed on top of the first substrate. The second substrate has a second reference orientation located at a <100> crystal plane location on the second substrate, wherein the first reference orientation is aligned with the second reference orientation. In another exemplary aspect, the second substrate has a second reference orientation located at a <110> crystal plane location on the second substrate, wherein the second substrate is formed over the first substrate with the second reference orientation being offset to the first reference orientation by about 45 degrees.

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NO-Patent Citations (2)

    Title
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